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DATA SHEET
PBSS4320T 20 V NPN low VCEsat transistor
Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
FEATURES * Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat * High collector current capability * High collector current gain * Improved efficiency due to reduced heat generation. APPLICATIONS * Power management applications * Low and medium power DC/DC convertors * Supply line switching * Battery chargers * Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T. MARKING TYPE NUMBER PBSS4320T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION TYPE NUMBER PBSS4320T PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) ZG*
Top view
handbook, halfpage
PBSS4320T
QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. 20 2 3 105 UNIT V A A m
3 3 1 2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION SOT23
2004 Mar 18
2
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRP ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak collector current peak collector current base current (DC) total power dissipation Tamb 25 C; note 2 Tamb 25 C; note 3 Tamb 25 C; note 4 Tamb 25 C; notes 1 and 2 Tstg Tj Tamb Notes 1. Operated under pulsed conditions: pulse width tp 100 ms; duty cycle 0.25. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. storage temperature junction temperature operating ambient temperature note 1 single peak CONDITIONS open emitter open base open collector - - - - - - - - - - - -65 - -65 MIN.
PBSS4320T
MAX. 20 20 5 2 3 5 0.5 300 480 540 1.2 +150 150 +150 V V V A A A A
UNIT
mW mW mW W C C C
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 in free air; note 3 in free air; notes 1 and 4 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 4. Operated under pulsed conditions: pulse width tp 100 ms; duty cycle 0.25. VALUE 417 260 230 104 UNIT K/W K/W K/W K/W
2004 Mar 18
3
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS - - - 220 220 220 200 150 - - - - - - - - 1.2 100 - IE = 0 A; VCB = 20 V; Tj = 150 C emitter-base cut-off current DC current gain IC = 0 A; VEB = 5 V IC = 100 mA; VCE = 2 V IC = 500 mA; VCE = 2 V IC = 1 A; VCE = 2 V; note 1 IC = 2 A; VCE = 2 V; note 1 IC = 3 A; VCE = 2 V; note 1 VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA IC = 1 A; IB = 50 mA IC = 2 A; IB = 40 mA; note 1 IC = 2 A; IB = 200 mA; note 1 IC = 3 A; IB = 300 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 2 A; IB = 200 mA; note 1 IC = 2 A; IB = 40 mA; note 1 IC = 3 A; IB = 300 mA; note 1 IC = 1 A; VCE = 2 V; note 1 IC = 100 mA; VCE = 5 V; f = 100 MHz IE = Ie = 0 A; VCB = 10 V; f = 1 MHz MIN. - - - - - - - - - - - - - 80 - - - - - TYP.
PBSS4320T
MAX. 100 50 100 - - - - - 70 120 230 210 310 105 1.1 1.2 - - 35
UNIT nA A nA
collector-base cut-off current IE = 0 A; VCB = 20 V
mV mV mV mV mV m V V V MHz pF
2004 Mar 18
4
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
handbook, halfpage
800
MLD849
handbook, halfpage
1200
MLD850
hFE 600
(1)
VBE (mV)
(1)
800
(2)
400
(2) (3)
400 200
(3)
0 10-1
1
10
102
103 104 IC (mA)
0 10-1
1
10
102
103 104 IC (mA)
VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
handbook, halfpage
1400
MLD851
handbook, halfpage
1400
MLD852
VBEsat (mV) 1000
(1) (2)
VBEsat (mV) 1000
(1) (2)
600
(3)
600
(3)
200 10-1
1
10
102
103 104 IC (mA)
200 10-1
1
10
102
103 104 IC (mA)
IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Base-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2004 Mar 18
5
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
103 handbook, halfpage VCEsat (mV) 102
MLD853
103 handbook, halfpage VCEsat (mV) 102
(3)
MLD854
(1) (2)
(1)
(2)
10
(3)
10
1 10-1
1
10
102
103 104 IC (mA)
1 10-1
1
10
102
103 104 IC (mA)
IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.6
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.7
Collector-emitter saturation voltage as a function of collector current; typical values.
103 handbook, halfpage VCEsat (mV) 102
MLD855
103 handbook, halfpage VCEsat (mV) 102
(1) (3) (2)
MLD856
(1)
10
(2) (3)
10
1 10-1
1
10
102
103 104 IC (mA)
1 10-1
1
10
102
103 104 IC (mA)
IC/IB = 50. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
IC/IB = 100. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.8
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.9
Collector-emitter saturation voltage as a function of collector current; typical values.
2004 Mar 18
6
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
102 handbook, halfpage RCEsat () 10
MLD857
1
(1)
10-1
(2) (3)
10-2 10-1
1
10
102
103 104 IC (m)
IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.10 Equivalent on-resistance as a function of collector current; typical values.
2004 Mar 18
7
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
PBSS4320T
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB JEITA
EUROPEAN PROJECTION
ISSUE DATE 04-11-04 06-03-16
2004 Mar 18
8
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
PBSS4320T
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2004 Mar 18
9
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R75/02/pp10 Date of release: 2004 Mar 18 Document order number: 9397 750 12436

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